Spire Semiconductor introduces state of the art semiconductor technology to the design and manufacture of thin film microelectronics.

Hybrid Microelectronics

	Lange Coupler

Working closely with customers' development and production teams, Spire Semiconductor designs, develops, and manufactures custom microwave hybrid circuits on ceramic, quartz, ALN, BEO, ferrite and glass.

These hybrid circuits encompass resistor and conductor layers, plated through holes, solid filed vias, multilayer circuits, air bridges, and snapstrates. The resistors are made using tantalum nitride, nichrome or sichrome materials. Conductors are typically gold over nickel or gold over nickel over titungsten.

Features

• Substrates: ceramic, aluminum nitride, fused silica, glass, silicon
• Tantalum nitride (10 to 200 ohms per square)
• Resistance range: 5 ohms to 1 megohn
• Excellent stability: <.03% at 125°C-1,000 hours
• TCR </= -100 ppm/°C; typical -80 ppm/°C
• Solderable and bondable conductors
• Bond pull test >6 GM, .001” diameter wire
• Multilayer available, resistors and conductors on each layer; Dialectric: polymide
• Plated through holes, filled vias

Chip Resistors

	Silicon Chip Resistor

Spire Semiconductor manufactures a full line of back contact and top contact silicon chip resistors. They range in value from 2 ohms to 15 megohms. The TCR is <100 ppm / ºC. Line widths are as small as 2.5 microns (0.1 mil). Conductors are either gold or aluminum.

Features of Back Contact Chip Resistors:

• Back contact resistance typically <0.4 ohms
• One wire bond per chip
• Notched gold bond pad: 10,000 angstrom minimum thickness (aluminum bond pad available)
• 20 mil x 20 mil x 10 mil overall chip size
• Tantalum nitride (self passivating) resistor material
• Gold backed silicon for eutectic or conductive epoxy for second electrical connection
• Resistance range: 5 ohms to 1 megohm
• TCR </= -100 ppm/°C
• 10,000 angstrom minimum silicon dioxide dielectric
• 100% electrically tested

Features of Top Contact Chip Resistors:

• Gold bond pads (aluminum bond pads available)
• 10,000 angstrom minimum bond pad thickness
• 20 mil x 20 mil x 10 mil overall chip size
• Tantalum nitride (self passivating) resistor material
• Gold backed silicon for eutectic or conductive mounting
• Resistance range: 5 ohms to 1 megohm
• TCR </= -100 ppm/°C
• 10,000 angstrom minimum silicon dioxide dielectric
• 100% electrically tested

Brochures & Request Information

To see a list of available brochures and contact Spire Spire Semiconductor for more information. More»